name | parameter | units | default | example | area | |
---|---|---|---|---|---|---|

1 | IS | saturation current | A | 1.0e-14 | 1.0e-14 | * |

2 | RS | ohmic resistanc | Ohm | 0 | 10 | * |

3 | N | emission coefficient | - | 1 | 1.0 | |

4 | TT | transit-time | sec | 0 | 0.1ns | |

5 | CJO | zero-bias junction capacitance | F | 0 | 2pF | * |

6 | VJ | junction potential | V | 1 | 0.6 | |

7 | M | grading coefficient | - | 0.5 | 0.5 | |

8 | EG | band-gap energy | eV | 1.11 | 1.11 Si | |

9 | XTI | saturation-current temp.exp | - | 3.0 | 3.0 pn 2.0 Schottky | |

10 | KF | flicker noise coefficient | - | 0 | | |

11 | AF | flicker noise exponent | - | 1 | | |

12 | FC | coefficient for forward-bias depletion capacitance formula | - | 0.5 | | |

13 | BV | reverse breakdown voltage | V | infinite | 40.0 | |

14 | IBV | current at breakdown voltage | V | 1.0e-3 | | |

15 | TNOM | parameter measurement temperature | deg C | 27 | 50 | |

The DC characteristics of the diode are determined by the parameters IS, N, and the ohmic resistance RS. Charge storage effects are modeled by a transit time, TT, and a nonlinear depletion layer capacitance which is determined by the parameters CJO, VJ, and M. The temperature dependence of the saturation current is defined by the parameters EG, the band gap energy and XTI, the saturation current temperature exponent. The nominal temperature at which these parameters were measured is TNOM, which defaults to the circuit-wide value specified on the .OPTIONS control line. Reverse breakdown is modeled by an exponential increase in the reverse diode current and is determined by the parameters BV and IBV (both of which are positive numbers).

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